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IXTK17N120L
IXTX17N120L
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-264 (IXTK) Outline
g fs
V DS = 20V, I D = 0.5 ? I DSS , Note 1
3.5
5.0
6.5
S
C iss
8300
pF
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 15V, V DS = 0.5 ? V DSS , I D = 0.5 ? I DSS
R G = 2 Ω (External)
V GS = 15V, V DS = 0.5 ? V DSS , I D = 0.5 ? I DSS
520
90
42
31
110
83
155
41
60
0.15
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.18 ° C/W
° C/W
Safe Operating Area Specification
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
SOA
V DS = 800V, I D = 0.3A, T C = 60 ° C, t P = 3s
240
W
PLUS 247 TM (IXTX) Outline
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 17A, V GS = 0V, Note 1
I F = I S , -di/dt = 100A/ μ s, V R = 100V
1830
17
50
1.5
A
A
V
ns
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Note:
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
A
A 1
A 2
b
b 1
b 2
C
D
E
e
L
L1
Q
R
4.83 5.21
2.29 2.54
1.91 2.16
1.14 1.40
1.91 2.13
2.92 3.12
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
4.32 4.83
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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